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KSB1121
KSB1121
High Current Driver Applications
* * * * Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSD1621
1
SOT-89
1. Base 2. Collector 3. Emitter
PNP Epitaxial Planar Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC PC* TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -30 -25 -6 -2 500 1.3 150 -55 ~ 150 Units V V V A mW W C C
* Mounted on Ceramic Board (250mm2 x 0.8mm)
Electrical Characteristics Ta=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance * Turn On Time * Storage Time * Fall time Test Condition IC= -10A, IE= 0 IC= -1mA, IB= 0 IE= -10A, IC= 0 VCB= -20V, IE=0 VBE= -4V, IC= 0 VCE= -2V, IC= -0.1A VCE= -2V, IC= -1.5A IC= -1.5A, IB= -75mA IC= -1.5A, IB= -75mA VCE= -10V, IC= -50mA VCB= -10V, IE=0, f=1MHz VCC= -12V, VBE = -5V IB1=-IB2=-25mA IC= -500mA, RL=24 100 65 -0.35 -0.85 150 32 60 350 25 Min. -30 -25 -6 -100 -100 560 -0.6 -1.2 V V MHz pF ns ns ns Typ. Max. Units V V V nA nA
* Pulse Test: PW20s, Duty Cycle1%
hFE Classification
Classification hFE1 R 100 ~ 200 Marking S 140 ~ 280 T 200 ~ 400 U 280 ~ 560
SZX
hFE Grade
(c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
KSB1121
Typical Characteristics
1000 -2.0
IB = -200mA IB = -100mA IB = -50mA IB = -30mA IB = -20mA
VCE= -2V
IC[A], COLLECTOR CURRENT
-1.6
IB = -10mA
-1.2
hFE, DC CURRENT GAIN
100
IB = -8mA IB = -6mA
-0.8
IB = -4mA IB = -2mA
10
-0.4
IB = 0
0.0 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 1 -0.01 -0.1 -1 -10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
-3.2
VCE(sat)[V], SATURATION VOLTAGE
IC = 10 IB
-2.8
VCE = -2V
IC[A], COLLECTOR CURRENT
-2.4
-1
-2.0
-1.6
-1.2
-0.1
-0.8
-0.4
-0.01 -0.01
-0.1
-1
-10
0.0 0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
1000
IE=0 f = 1MHz
VCE = -10V
Cob[pF], CAPACITANCE
100
100
10
1 -0.1
10 -0.1 -1 -10
-1
-10
-100
VCB [V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSB1121
Package Demensions
SOT-89
4.50 0.20 1.65 0.10 C0.2
(0.50)
1.50 0.20 (0.40)
0.20
2.50
0.50 0.10 1.50 TYP 1.50 TYP
0.40 0.10 0.40 +0.10 -0.05
(1.10)
4.10
0.20
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM
StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H3

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